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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
* Low Base Drive Requirement * High Peak DC Current Gain (55 Typical) @ IC = 100 mA * Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread * Integrated Collector-Emitter Free Wheeling Diode * Fully Characterized and Guaranteed Dynamic VCE(sat) * "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Antisaturation Network
Diode and Built-in Efficient
Integrated Collector-Emitter
NPN Power Transistor with
High Speed, High Gain Bipolar
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
The BUL44D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features:
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds
Thermal Resistance -- Junction to Case -- Junction to Ambient
Operating and Storage Temperature
*Total Device Dissipation @ TC = 25_C *Derate above 25C
Base Current -- Continuous Base Current -- Peak (1)
Collector Current -- Continuous -- Peak (1)
Emitter-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
It's characteristics make it also suitable for PFC application.
Rating
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCES
RJC RJA
IC ICM
IB IBM
PD
TL
- 65 to 150
Value
2.5 62.5
260
700
700
400
50 0.4
POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS
12
1 2
2 5
BUL44D2
CASE 221A-06 TO-220AB
Order this document by BUL44D2/D
Watt W/_C
_C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_C
_C
1
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BUL44D2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Collector Cutoff Current (VCE = 500 V, VEB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Forward Recovery Time (see Figure 22 bis) (IF = 0.2 Adc, di/dt = 10 A/s) Forward Diode Voltage (IEC = 1 Adc) DC Current Gain (IC = 0.4 Adc, VCE = 1 Vdc) Collector-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Base-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 1 Adc, VCE = 1 Vdc) (IC = 0.4 Adc, IB = 20 mAdc) (IC = 1 Adc, IB = 0.2 Adc) (IC = 1 Adc, IB = 0.2 Adc) (IF = 1 Adc, di/dt = 10 A/s) (IF = 0.4 Adc, di/dt = 10 A/s) (IEC = 0.2 Adc) (IEC = 0.2 Adc) (IEC = 0.4 Adc) Characteristic @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCE(sat) VBE(sat) Symbol VCBO VEBO ICEO IEBO ICES VEC hFE Tfr Min 700 400 20 18 12 10 7 0.25 0.27 0.78 0.65 14.5 0.45 0.67 0.28 0.35 0.87 0.76 Typ 340 390 415 920 470 0.6 0.8 0.9 1.1 14 9.5 32 26 Max 0.65 1 50 500 100 50 500 100 1.2 1.5 0.4 0.5 0.9 0.8 0.5 0.6 1 0.9 1 Adc Adc Adc Unit Vdc Vdc Vdc Vdc Vdc ns -- V
2
Motorola Bipolar Power Transistor Device Data
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I 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I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I I I IIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIII I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I II I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) DYNAMIC CHARACTERISTICS DYNAMIC SATURATION VOLTAGE
Motorola Bipolar Power Transistor Device Data
Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Characteristic IC = 0.4 A IB1 = 40 mA VCC = 300 V IC = 1 A IB1 = 0.2 A VCC = 300 V IC = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 0.4 Adc IB1 = 40 mAdc IB2 = 40 mAdc IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc IC = 1 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc
IC = 0.5 Adc, IB1 = 50 mAdc IB2 = 250 mAdc VCC = 300 Vdc
IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 Vdc
@ 3 s
@ 1 s
@ 3 s
@ 1 s
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
@ TC = 25C @ TC = 125C
VCE(dsat)
Symbol
Cob
Cib
ton
ton
toff
toff
fT
tc
ts
tc
ts
tc
ts
tc
ts
tf
tf
tf
tf
1.65
2.05
Min
700
1300
4.4 12.8
1.05 1.45
0.55 0.70
Typ
90 105
150 330
150 175
180 400
100 100
100 90
450 600
240
110 180
110 105
2.2
2.8
1.1 1.5
0.5 1.8
0.5 1.3
3.3 6.8
85 80
50
13
1000
1.95
2.35
0.75
1.25
Max
250
225
300
150
175
150
150
150
150
600
500
1.5
75
BUL44D2
MHz
Unit
pF
pF
s
s
s
s
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
3
BUL44D2
TYPICAL STATIC CHARACTERISTICS
100 VCE = 1 V 80 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C 60 TJ = 25C 80 TJ = 125C 60 TJ = 25C 100 VCE = 5 V
40
TJ = - 20C
40
TJ = - 20C
20
20
0 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
0 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
4 TJ = 25C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 3
10 IC/IB = 5
2A 2 1.5 A 1A 1 400 mA 0 1 IC = 200 mA 10 100 IB, BASE CURRENT (mA) 1000
1 TJ = 125C TJ = 25C TJ = - 20C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10
Figure 3. Collector Saturation Region
Figure 4. Collector-Emitter Saturation Voltage
10 IC/IB = 10 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS)
10 IC/IB = 20
TJ = 25C 1
1 TJ = 25C TJ = 125C TJ = - 20C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10
TJ = 125C TJ = - 20C 0.1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 1
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Collector-Emitter Saturation Voltage
4
Motorola Bipolar Power Transistor Device Data
BUL44D2
TYPICAL STATIC CHARACTERISTICS
10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 10
1
TJ = - 20C TJ = 125C TJ = 25C
1
TJ = - 20C TJ = 125C TJ = 25C
0.1 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
0.1 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 7A. Base-Emitter Saturation Region
Figure 7B. Base-Emitter Saturation Region
10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS)
10
25C 1 125C
1
TJ = - 20C TJ = 125C TJ = 25C
0.1 0.001
0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
1
0.1 0.01
1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
10
Figure 7C. Base-Emitter Saturation Region
Figure 8. Forward Diode Voltage
Motorola Bipolar Power Transistor Device Data
5
BUL44D2
TYPICAL SWITCHING CHARACTERISTICS
1000 Cib (pF) C, CAPACITANCE (pF) 100 t, TIME (ns) 600 Cob (pF) IC/IB = 10 TJ = 25C f(test) = 1 MHz 1000 IBon = IBoff VCC = 300 V PW = 40 s TJ = 125C TJ = 25C
800
400 IC/IB = 5 200
10
1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100
0 0.2 0.8 1.4 IC, COLLECTOR CURRENT (AMPS) 2
Figure 9. Capacitance
Figure 10. Resistive Switch Time, ton
4000 3500 3000 t, TIME ( s) 2500 2000 1500 1000 0 1 IC, COLLECTOR CURRENT (AMPS) 2 TJ = 125C TJ = 25C t, TIME ( s) IC/IB = 10 IBon = IBoff VCC = 300 V PW = 40 s
3 2.5 2 1.5 1 0.5 IC/IB = 5 0 0.4 1.2 0.8 1.6 IC, COLLECTOR CURRENT (AMPS) 2 TJ = 125C TJ = 25C
IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H
Figure 11. Resistive Switch Time, toff
Figure 12. Inductive Storage Time, tsi @ IC/IB = 5
700 600 500 t, TIME (ns) 400 300 200 100 0 0 1 0.5 1.5 IC, COLLECTOR CURRENT (AMPS) 2 tfi TJ = 125C TJ = 25C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC/IBon = 5 t si , STORAGE TIME (s)
4 TJ = 125C TJ = 25C 3 IC = 1 A 2 tc
1
IC = 0.3 A
IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 9 hFE, FORCED GAIN 12 15
0 3 6
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
Figure 14. Inductive Storage Time
6
Motorola Bipolar Power Transistor Device Data
BUL44D2
TYPICAL SWITCHING CHARACTERISTICS
700 600 t fi , FALL TIME (ns) 500 400 300 200 100 IC = 1 A 0 3 5 7 9 11 hFE, FORCED GAIN 13 15 0 3 6 9 hFE, FORCED GAIN 12 15 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C IC = 0.3 A t c , CROSSOVER TIME (ns) 1000 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C
800
600
IC = 1 A
400
200 IC = 0.3 A
Figure 15. Inductive Fall Time
Figure 16. Inductive Crossover Time
900 800 700 600 t, TIME (ns) 500 400 300 200 100 0 0.4 IBon = IBoff VCC = 15 V 1.2 0.8 1.6 IC, COLLECTOR CURRENT (AMPS) VZ = 300 V LC = 200 H 2 IC/IB = 10 IC/IB = 20 t, TIME (ns) TJ = 125C TJ = 25C
2000 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C IC/IB = 20
1500
1000
500 IC/IB = 10 0 0.4 1.2 0.8 1.6 IC, COLLECTOR CURRENT (AMPS) 2
Figure 17. Inductive Switching, tfi
Figure 18. Inductive Switching, tc
3000 IC/IB = 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H t, TIME (ns)
3000 IC/IB = 10
2500
2000 t, TIME (ns)
2000 IC/IB = 20 1500 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 0
IB = 50 mA 1000 IB = 100 mA IB = 200 mA IB = 500 mA 0 0 0.5 1 2 1.5 IC, COLLECTOR CURRENT (AMPS) 2.5 3
1000 500
TJ = 125C TJ = 25C 2
0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS)
Figure 19. Inductive Storage Time, tsi
Figure 20. Inductive Storage Time, tsi
Motorola Bipolar Power Transistor Device Data
7
BUL44D2
TYPICAL SWITCHING CHARACTERISTICS
10 VCE dyn 1 s dyn 3 s 0V 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc 10% IC tsi IC 90% IC tfi
Figure 21. Dynamic Saturation Voltage Measurements
Figure 22. Inductive Switching Measurements
VFRM VF 0.1 VF 0
VFR (1.1 VF unless otherwise specified) VF
tfr
IF 10% IF
0
2
4
6
8
10
Figure 22 bis. tfr Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RB2 IB2 Iout IB RB1 VCE IB1 IC PEAK
1 F -Voff
8
Motorola Bipolar Power Transistor Device Data
BUL44D2
TYPICAL CHARACTERISTICS
10 IC, COLLECTOR CURRENT (AMPS) 10 s 1 EXTENDED SOA 5 ms DC 0.1 1 ms IC, COLLECTOR CURRENT (AMPS) 1 s 2.5 TC 125C GAIN 4 LC = 500 H
2
1.5
1
0.5 0V -1.5 V 0
-5 V
0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000
200
500 800 300 400 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
900
Figure 23. Forward Bias Safe Operating Area
Figure 24. Reverse Bias Safe Operating Area
1 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.8
0.6 THERMAL DERATING 0.4
0.2 0 20 40 60 80 120 100 TC, CASE TEMPERATURE (C) 140 160
Figure 25. Forward Bias Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 23 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 23 may be found at any case temperature by using the appropriate curve on Figure 25.
TJ(pk) may be calculated from the data in Figure 26. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 24). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Motorola Bipolar Power Transistor Device Data
9
BUL44D2
TYPICAL THERMAL RESPONSE
1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.1 1 t, TIME (ms) 10 t1 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000
0.01 0.01
Figure 26. Typical Thermal Response (ZJC(t)) for BUL44D2
TYPICAL STATIC CHARACTERISTICS
1100 1000 900 BVCER (VOLTS) BVCER (VOLTS) @ 10 mA 800 700 600 500 400 10 100 RBE () 1000 BVCER(sus) @ 200 mA TJ = 25C t fr , FORWARD RECOVERY TIME (ns) 440 420 400 380 360 340 320 300 0 1.5 0.5 1 IF, FORWARD CURRENT (AMP) 2 dI/dt = 10 A/s TC = 25C
Figure 27. BVCER
Figure 28. Forward Recovery Time tfr
10
Motorola Bipolar Power Transistor Device Data
BUL44D2
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
11
BUL44D2
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12
Motorola Bipolar Power Transistor Device Data
*BUL44D2/D*
BUL44D2/D

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